AN UNBIASED VIEW OF N TYPE GE

An Unbiased View of N type Ge

s is the fact of your substrate substance. The lattice mismatch brings about a substantial buildup of pressure energy in Ge layers epitaxially grown on Si. This strain Vitality is largely relieved by two mechanisms: (i) generation of lattice dislocations at the interface (misfit dislocations) and (ii) elastic deformation of both equally the substra

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